TSP10N65M - N-Channel MOSFET

Truesemi

Datasheet Details

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

10.0A,650V,Max. RDS(on)=1.0Ω @ VGS =10V.
Low gate charge(typical 48nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current TC = 25℃ TC = 100℃ Pulsed Drain Current (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Aval.

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