TSP10N65M - N-Channel MOSFET
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices a
TSP10N65M Features
* 10.0A,650V,Max.RDS(on)=1.0Ω @ VGS =10V
* Low gate charge(typical 48nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR
