TSP10N65M Datasheet - Truesemi

N-Channel MOSFET

TSP10N65M Features

* 10.0A,650V,Max.RDS(on)=1.0Ω @ VGS =10V

* Low gate charge(typical 48nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR

TSP10N65M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSP10N65M Datasheet (1.22 MB)

TSP10N65M Datasheet Preview — Preview of TSP10N65M PDF

Datasheet Details

Part number:

TSP10N65M

Manufacturer:

Truesemi

File Size:

1.22 MB

Description:

N-channel mosfet.

📁 Related Datasheet

TSP10N60C 600V Heatsink N-Channel Type Power MOSFET (Thinki Semiconductor)

TSP10N60M 600V N-Channel MOSFET (Truesemi)

TSP10N60S N-Channel MOSFET (Truesemi)

TSP10H200S Trench Schottky Rectifier (Taiwan Semiconductor)

TSP10H45S Trench Schottky Rectifier (Taiwan Semiconductor)

TSP10H60S Trench Schottky Rectifier (Taiwan Semiconductor)

TSP10U100S Trench Schottky Rectifier (Taiwan Semiconductor)

TSP10U120S Trench Schottky Rectifier (Taiwan Semiconductor)

TSP10U45S Trench Schottky Rectifier (Taiwan Semiconductor)

TSP10U60S Trench Schottky Rectifier (Taiwan Semiconductor)

TAGS

TSP10N65M N-Channel MOSFET Truesemi

Image Gallery

TSP10N65M Features

TSP10N65M General Description

Datasheet Details

File Size:

Description:

TSP10N65M Distributor