TSP10N65M Datasheet - Truesemi

TSP10N65M N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSP10N65M Features

* 10.0A,650V,Max.RDS(on)=1.0Ω @ VGS =10V

* Low gate charge(typical 48nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR

TSP10N65M-Truesemi.pdf