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TSP10N60C

600V Heatsink N-Channel Type Power MOSFET

TSP10N60C Features

* RDS(on) (Max 0.75 Ω )@VGS=10V

* Gate Charge (Typical 45nC)

* Improved dv/dt Capability

* High ruggedness

* 100% Avalanche Tested 1. Gate { { 2. Drain

* ◀▲

* { 3. Source BVDSS = 600V RDS(ON) = 0.75 ohm ID = 10.3A General Description This N-channel enhancement m

TSP10N60C General Description

This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220 pkg is well suited for .

TSP10N60C Datasheet (0.96 MB)

Preview of TSP10N60C PDF

Datasheet Details

Part number:

TSP10N60C

Manufacturer:

Thinki Semiconductor

File Size:

0.96 MB

Description:

600v heatsink n-channel type power mosfet.

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TSP10N60C 600V Heatsink N-Channel Type Power MOSFET Thinki Semiconductor

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