TSP10N60M Datasheet - Truesemi

TSP10N60M 600V N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSP10N60M Features

* 10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V

* Low gate charge ( typical 48nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability {D GDS TO-220 GD S TO-220F

* ◀▲ {G

* {S Absolute Maximum Ratings T

TSP10N60M-Truesemi.pdf

TSP10N60M Datasheet Preview — Preview of TSP10N60M PDF

Datasheet Details

Part number:

TSP10N60M

Manufacturer:

Truesemi

File Size:

263.29 KB

Description:

600v n-channel mosfet.

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TSP10N60M TSP10N60M 600V N-Channel MOSFET Truesemi

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