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TSP10N60M

600V N-Channel MOSFET

TSP10N60M Features

* 10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V

* Low gate charge ( typical 48nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability {D GDS TO-220 GD S TO-220F

* ◀▲ {G

* {S Absolute Maximum Ratings T

TSP10N60M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSP10N60M Datasheet (263.29 KB)

Preview of TSP10N60M PDF

Datasheet Details

Part number:

TSP10N60M

Manufacturer:

Truesemi

File Size:

263.29 KB

Description:

600v n-channel mosfet.

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TSP10N60M 600V N-Channel MOSFET Truesemi

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