TSP10N60M - 600V N-Channel MOSFET
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices a
TSP10N60M Features
* 10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V
* Low gate charge ( typical 48nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability {D GDS TO-220 GD S TO-220F
* ◀▲ {G
* {S Absolute Maximum Ratings T
