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TSP12N65M

N-Channel MOSFET

TSP12N65M Features

* 12.0A, 650V, RDS(on) = 0.750 @VGS = 10 V

* Low gate charge ( typical 52nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability D GDS TO-220 GD S TO-220F

* ◀▲ G

* S Absolute Maximum Ratings T

TSP12N65M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSP12N65M Datasheet (367.54 KB)

Preview of TSP12N65M PDF

Datasheet Details

Part number:

TSP12N65M

Manufacturer:

Truesemi

File Size:

367.54 KB

Description:

N-channel mosfet.

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TSP12N65M N-Channel MOSFET Truesemi

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