TSP11N60S - N-Channel MOSFET

Truesemi

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Datasheet Details

Part number: TSP11N60S
Manufacturer: Truesemi
File Size: 922.39 KB
Datasheet: TSP11N60S-Truesemi.pdf
Description: N-Channel MOSFET

TSP11N60S Product details

Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

650V @TJ = 150 ℃.
Typ. RDS(on) = 0.38Ω.
Ultra Low Gate Charge (typ. Qg = 35nC).
100% avalanche tested.
Rohs Compliant D2-PAK (TO-263) Absolute Maximum Ratings Symbol Parameter VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) TSB11N60S 11.
8.5.
IDM Drain Current - Pulsed (Note 1) 40.
VGSS Gate-Source voltage EAS.

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