TSP10N60S Datasheet - Truesemi

TSP10N60S, N-Channel MOSFET

TSP10N60S / TSF10N60S/TSB10N60S 600V N-Channel MOSFET September, 2013 SJ-FET TSP10N60S/TSF10N60S /TSB10N60S 600V N-Channel MOSFET Description SJ-FET

Features

* 650V @TJ = 150 ℃
* Typ. RDS(on) = 0.42Ω
* Ultra Low Gate Charge (typ. Qg = 35nC)
* 100% avalanche tested
* Rohs Compliant D2-PAK (TO-263) Absolute Maximum Ratings Symbol Parameter VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Conti

TSP10N60S-Truesemi.pdf