N-Channel Enhancement Mode Field Effect Transistor.
Fairchild Semiconductor
FQP20N06L - 60V N-Channel MOSFET
FQP20N06L — N-Channel QFET® MOSFET FQP20N06L N-Channel QFET® MOSFET 60 V, 21 A, 55 mΩ Description This N-Channel enhancement mode power MOSFET is pro.
ST Microelectronics
STP20N06 - N-CHANNEL POWER MOSFET
STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP20N06 STP20N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.085 Ω <.
ST Microelectronics
STP20N06FI - N-CHANNEL POWER MOSFET
STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP20N06 STP20N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.085 Ω <.
NXP
PHP20N06 - N-channel TrenchMOS transistor
PHP20N06T; PHB20N06T N-channel TrenchMOS™ transistor Rev. 01 — 22 February 2001 Product specification 1. Description N-channel enhancement mode field-e.
CET
P20N06 - CEP20N06
N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 28A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. Super high dense cell des.
ON Semiconductor
MTP20N06V - Power MOSFET
MTP20N06V Preferred Device Power MOSFET 20 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and.
INCHANGE
FQP20N06L - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQP20N06L DESCRIPTION ·Drain Current ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·S.
NXP
PHP20N06 - PowerMOS transistor
PHP20N06T; PHB20N06T N-channel TrenchMOS™ transistor Rev. 01 — 22 February 2001 Product specification 1. Description N-channel enhancement mode field-e.
NXP
PHP20N06E - PowerMOS transistor
Philips Semiconductors Product specification PowerMOS transistor PHP20N06E GENERAL DESCRIPTION N-channel enhancement mode field-effect power trans.
NXP
PHP20N06T - N-channel TrenchMOS transistor
PHP20N06T; PHB20N06T N-channel TrenchMOS™ transistor Rev. 01 — 22 February 2001 Product specification 1. Description N-channel enhancement mode field-e.
nexperia
PHP20N06T - N-channel MOSFET
PHP20N06T N-channel TrenchMOS standard level FET Rev. 02 — 27 November 2009 Product data sheet 1. Product profile 1.1 General description Standard .
Fairchild Semiconductor
FQP20N06 - 60V N-Channel MOSFET
FQP20N06 May 2001 QFET FQP20N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produce.
Freescale
MCP20N06 - N-Channel 60-V (D-S) MOSFET
Freescale N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to e.
Freescale
FQP20N06 - N-Channel 60-V (D-S) MOSFET
Freescale N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to e.
Freescale
P20N06 - FQP20N06
Freescale N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to e.
Motorola
MTP20N06V - TMOS POWER FET
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP20N06V/D ™ TMOS V ™ Designer's Data Sheet MTP20N06V TMOS POW.
CET
CEP20N06 - N-Channel MOSFET
CEP20N06/CEB20N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 25A, RDS(ON) =55mΩ @VGS = 10V. RDS(ON) =75mΩ @VGS = 4.5V. Super hig.
NXP
PHX15N06E - PowerMOS transistor Isolated version of PHP20N06E
Philips Semiconductors Product specification PowerMOS transistor Isolated version of PHP20N06E GENERAL DESCRIPTION N-channel enhancement mode field-.