P20N06 Datasheet | Specifications & PDF Download

STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP20N06 STP20N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.085 Ω <

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 28A, RDS(ON) = 40mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. Super high dense cell des

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FQP20N06L — N-Channel QFET® MOSFET FQP20N06L N-Channel QFET® MOSFET 60 V, 21 A, 55 mΩ Description This N-Channel enhancement mode power MOSFET is pro

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STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP20N06 STP20N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.085 Ω <

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FQP20N06 May 2001 QFET FQP20N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produce

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Philips Semiconductors Product specification PowerMOS transistor Isolated version of PHP20N06E GENERAL DESCRIPTION N-channel enhancement mode field-

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Freescale N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to e

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CEP20N06/CEB20N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 25A, RDS(ON) =55mΩ @VGS = 10V. RDS(ON) =75mΩ @VGS = 4.5V. Super hig

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQP20N06L DESCRIPTION ·Drain Current ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·S

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PHP20N06T N-channel TrenchMOS standard level FET Rev. 02 — 27 November 2009 Product data sheet 1. Product profile 1.1 General description Standard

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP20N06V/D ™ TMOS V ™ Designer's Data Sheet MTP20N06V TMOS POW

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MTP20N06V Preferred Device Power MOSFET 20 Amps, 60 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and

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PHP20N06T; PHB20N06T N-channel TrenchMOS™ transistor Rev. 01 — 22 February 2001 Product specification 1. Description N-channel enhancement mode field-e

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Philips Semiconductors Product specification PowerMOS transistor PHP20N06E GENERAL DESCRIPTION N-channel enhancement mode field-effect power trans

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Freescale N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to e

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PHP20N06T; PHB20N06T N-channel TrenchMOS™ transistor Rev. 01 — 22 February 2001 Product specification 1. Description N-channel enhancement mode field-e

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PHP20N06T; PHB20N06T N-channel TrenchMOS™ transistor Rev. 01 — 22 February 2001 Product specification 1. Description N-channel enhancement mode field-e

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Freescale N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to e

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