P2N80 Datasheet | Specifications & PDF Download

FQP2N80 — N-Channel QFET® MOSFET November 2013 FQP2N80 N-Channel QFET® MOSFET 800 V, 2.4 A, 6.3 Ω Description This N-Channel enhancement mode power

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FQP2N80 September 2000 QFET FQP2N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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isc N-Channel MOSFET Transistor IXTP2N80P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6Ω@VGS=10V ·Fully characterized avalanche voltage

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P2N80-VB P2N80-VB Datasheet Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 850 V

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Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 2N80 IXTP 2N80 VDSS ID25 RDS(on) = 800 V

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PolarTM Power MOSFET IXTU2N80P IXTY2N80P IXTA2N80P VDSS = ID25 =  RDS(on) 800V 2A 6 N-Channel Enhancement Mode IXTP2N80P TO-251 (IXTU) Avalan

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STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 N-channel 800 V, 3.5 Ω typ., 2 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datas

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isc N-Channel MOSFET Transistor IXTP2N80 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.2Ω@VGS=10V ·Fully characterized avalanche voltage

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SSFP2N80 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ G

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