P5N80 Datasheet | Specifications & PDF Download

DTP5N80FSJ-VB www.VBsemi.com DTP5N80FSJ-VB Datasheet N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max

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DTL5N80/DTU5N80SJ/DTP5N80SJ/DTP5N80FSJ www.din-tek.jp N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.)

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DTL5N80/DTU5N80SJ/DTP5N80SJ/DTP5N80FSJ www.din-tek.jp N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.)

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STP5N80K5 N-channel 800 V, 1.50 Ω typ., 4 A MDmesh™ K5 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic dia

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Shantou Huashan Electronic Devices Co.,Ltd. HFP5N80 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel en

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HFP5N80 May 2013 HFP5N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ  ȍ ID = 5.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanche

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Features � 4.5A,800V,RDS(on)(Max2.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 14nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junct

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FQP5N80 September 2000 QFET FQP5N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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FQP5N80 FQP5N80 800V N-Channel MOSFET September 2000 QFETTM General Description These N-Channel enhancement mode power field effect transistors are

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SSFP5N80 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ G

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