P60N10 Datasheet | Specifications & PDF Download

P60N10-VB P60N10-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.017 at VGS = 10 V ID

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CEP60N10V/CEB60N10V N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 57A, RDS(ON) = 24mΩ @VGS = 10V. Super high dense

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isc N-Channel MOSFET Transistor IXTP60N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10V ·Fully characterized avalanche volta

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CEP60N10/CEB60N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 57A, RDS(ON) = 24mΩ @VGS = 10V. Super high dense cell design for

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AP60N10NF 100V N-Channel Enhancement Mode MOSFET Description The AP60N10NF uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate c

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TrenchTM Power MOSFET IXTA60N10T IXTP60N10T N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL

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SUP60N10-16L Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 FEATURES rDS(on) (W) ID (A) 60 56 0.016 @ VGS = 1

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