Datasheet Specifications
- Part number
- IXTP60N10T
- Manufacturer
- INCHANGE
- File Size
- 246.82 KB
- Datasheet
- IXTP60N10T-INCHANGE.pdf
- Description
- N-Channel MOSFET
Description
isc N-Channel MOSFET Transistor IXTP60N10T *.Features
* Static drain-source on-resistance: RDS(on) ≤ 18mΩ@VGS=10VApplications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 180 PD Total Dissipation @TC=25℃ 176 Tj Operating Junction Temperature -55~175 Tstg Storage TeIXTP60N10T Distributors
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