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IXTP60N20T

Power MOSFET

IXTP60N20T Features

* z z z z z High Current Handling Capability 175°C Operating Temperature Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ± 20V, VDS = 0V VDS

IXTP60N20T Datasheet (162.02 KB)

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Datasheet Details

Part number:

IXTP60N20T

Manufacturer:

IXYS

File Size:

162.02 KB

Description:

Power mosfet.
TrenchTM Power MOSFET IXTA60N20T IXTP60N20T IXTQ60N20T VDSS ID25 RDS(on) = 200V = 60A ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP.

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IXTP60N20T Power MOSFET IXYS

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