Datasheet Specifications
- Part number
- IXTP60N20T
- Manufacturer
- IXYS
- File Size
- 162.02 KB
- Datasheet
- IXTP60N20T_IXYS.pdf
- Description
- Power MOSFET
Description
TrenchTM Power MOSFET IXTA60N20T IXTP60N20T IXTQ60N20T VDSS ID25 RDS(on) = 200V = 60A ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP.
Features
* z z z z z High Current Handling Capability 175°C Operating Temperature Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ± 20V, VDS = 0V VDSApplications
* z z z ±200 nA 1 μA 250 μA 40 mΩ z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications © 2010 IXYS CORPORATION, All Rights Reserved DS99359B(7/10) Free Datasheet hIXTP60N20T Distributors
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