IXTP60N10T Datasheet - IXYS

IXTP60N10T Power MOSFET

TrenchTM Power MOSFET IXTA60N10T IXTP60N10T N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V  20 V  30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 60 180 10 500 176 -55 +175 175 -55 +175 A A A mJ W  C  C  C Maximum Lead Temperature for Soldering 30.

IXTP60N10T Features

* Ultra-Low On Resistance

* Avalanche Rated

* Low Package Inductance - Easy to Drive and to Protect

* 175C Operating Temperature

* Fast Intrinsic Diode Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* Automotive - Motor Drives - 42V

IXTP60N10T_IXYS.pdf

IXTP60N10T Datasheet Preview — Preview of IXTP60N10T PDF

Datasheet Details

Part number:

IXTP60N10T

Manufacturer:

IXYS

File Size:

288.95 KB

Description:

Power mosfet.

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IXTP60N10T IXTP60N10T Power MOSFET IXYS

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