IXTP60N20X4 Datasheet - IXYS

IXTP60N20X4 - Power MOSFET

X4-Class Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTP60N20X4 D G S Symbol V DSS V DGR VGS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions T J = 25C to 175C T J = 25C to 175C, R GS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C I S  I, DM V DD  V, DSS T J  150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Mounting Torque Maximum Rating.

IXTP60N20X4 Features

* International Standard Package

* Low RDS(ON) and QG

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* PFC Circuits

IXTP60N20X4-IXYS.pdf