P75N75 Datasheet | Specifications & PDF Download

PJP75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=11mΩ • Advanced Trench Process Technology • High Density Cell Desig

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www.DataSheet4U.com DFP75N75 N-Channel MOSFET Features ■ ■ ■ ■ ■ ■ Low RDS(on) (0.012Ω )@VGS=10V Low Gate Charge (Typical 90nC) Low Crss (Typical 21

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HFP75N75 Mar 2007 HFP75N75 75V N-Channel MOSFET BVDSS = 75 V RDS(on) typ Pȍ ID = 80 A FEATURES ‰ Originative New Design ‰ Superior Avalanche

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Wisdom Semiconductor WFP75N75 N-Channel MOSFET Features ■ RDS(on) (Max 0.017 Ω )@VGS=10V ■ Gate Charge (Typical 85nC) ■ Improved dv/dt Capability,

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PJP75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=11mΩ • Advanced Trench Process Technology • High Density Cell Desig

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HRP75N75V HRP75N75V 70V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Charac

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STP75N75F4 N-channel 75 V, 0.0092 Ω typ., 78 A STripFET™ DeepGATE™ Power MOSFET in a TO-220 package Datasheet — production data Features Type STP75N

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SW75N75 Features  High ruggedness  Low RDS(ON) (Typ 6mΩ)@VGS=10V  Low Gate Charge (Typ 126nC)  Improved dv/dt Capability  100% Avalanche Tested

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TSP75N75M 75V N-Channel MOSFET Features ■ 80A,75v,RDS(on)=11mΩ@VGS=10V ■ Gate charge (Typical 64nC) ■ High ruggedness ■ Fast switching ■ 100% Avalanc

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