PD1 Datasheet | Specifications & PDF Download

ZPD2.7 ZPD75 62.5±3 3.9±0.4 ELV Version 2016-11-23 ~DO-35 / ~(SOD-27) Ø 1.9±0.1 Ø max 0.5 Dimensions - Maße [mm] ZPD2.7 ZPD75 Planar Zener

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ZPD2V7B ZPD75B Silicon Epitaxial Planar Zener Diodes Max. 0.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black ST Brand XXX ST Max

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ZPD2.7 THRU ZPD51 SILICON PLANAR ZENER DIODES Features Silicon Planar Zener Diodes The Zener voltages are graded according to the international E 24

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ZPD2.7 - ZPD75 VZ : 2.7 to 75V PD : 500mW FEATURES : * Silicon planar zener diodes. * Standard zener voltage tolerance is ± 5%. * Other tolerances are

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ZPD2.7 ZPD75 62.5±3 3.9±0.4 ELV Version 2016-11-23 ~DO-35 / ~(SOD-27) Ø 1.9±0.1 Ø max 0.5 Dimensions - Maße [mm] ZPD2.7 ZPD75 Planar Zener

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ZPD2.7 ZPD75 62.5±3 3.9±0.4 ELV Version 2016-11-23 ~DO-35 / ~(SOD-27) Ø 1.9±0.1 Ø max 0.5 Dimensions - Maße [mm] ZPD2.7 ZPD75 Planar Zener

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ZPD2.7 - ZPD75 VZ : 2.7 to 75V PD : 500mW FEATURES : * Silicon planar zener diodes. * Standard zener voltage tolerance is ± 5%. * Other tolerances are

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ZPD1 THRU ZPD75 ZENER DIODES DO-35 FEATURES ♦ Silicon Planar Zener Diodes ♦ The Zener voltages are graded according to the international E 12 standar

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Features ZPD2V7B THRU ZPD75B Silicon Epitaxial Planar Zener Diodes ABA C D Cathode Mark Maximum Ratings (TA=25℃ unless otherwise noted) DO-35 INC

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TPD1033F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1033F High-side Power Switch for Motors, Solenoids, and L

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ZPD1 THRU ZPD75 ZENER DIODES DO-35 FEATURES ♦ Silicon Planar Zener Diodes ♦ The Zener voltages are graded according to the international E 12 standar

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Features ZPD1 THRU ZPD75 Silicon Epitaxial Planar Zener Diodes ABA C D Cathode Mark Maximum Ratings (TA=25℃ unless otherwise noted) DO-35 INCHES

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µPD17120 SUBSERIES 4-BIT SINGLE-CHIP MICROCONTROLLER µPD17120 µPD17121 µPD17132 µPD17133 µPD17P132 µPD17P133 © 1993 Document No. IEU-1367A (O. D.

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IPD180N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc

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QPD1003 500W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET Product Overview The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which opera

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Features ZPD2V7B THRU ZPD75B Silicon Epitaxial Planar Zener Diodes ABA C D Cathode Mark Maximum Ratings (TA=25℃ unless otherwise noted) DO-35 INC

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