PF10N60 Datasheet | Specifications & PDF Download

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L/TO-220F Plastic-Encapsulate MOSFETS CJP10N60,CJPF10N60 N-Channel Power MOSFET Descriptio

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FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET November 2013 FQP10N60C / FQPF10N60C N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ Description These

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FQP10N60-FQPF10N60 600V,10A N-Channel MOSFET General Description Product Summary The FQP10N60 & FQPF10N60 are fabricated using an advanced high vol

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FDP10N60NZ / FDPF10N60NZ — N-Channel UniFETTM II MOSFET November 2013 N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 mΩ Features • RDS(on) = 640 mΩ (

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP10N60

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP10N60

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FDPF10N60ZUT — N-Channel UniFETTM Ultra FRFETTM MOSFET FDPF10N60ZUT N-Channel UniFETTM Ultra FRFETTM MOSFET 600 V, 9 A, 800 mΩ December 2013 Featur

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FGPF10N60UNDF — 600 V, 10 A Short Circuit Rated IGBT FGPF10N60UNDF 600 V, 10 A Short Circuit Rated IGBT Features • Short Circuit Rated 10us • High Cu

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L/TO-220F Plastic-Encapsulate MOSFETS CJP10N60,CJPF10N60 N-Channel Power MOSFET Descriptio

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FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET February 2007 FRFET FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Features • 9A, 600V, RDS(on) = 0.8

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP10N60

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP10N60

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