PF7N60 Datasheet | Specifications & PDF Download

FQPF7N60 — N-Channel QFET® MOSFET FQPF7N60 N-Channel QFET® MOSFET 600 V, 4.3 A, 1 Ω Description This N-Channel enhancement mode power MOSFET is produ

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FQPF7N60 — N-Channel QFET® MOSFET FQPF7N60 N-Channel QFET® MOSFET 600 V, 4.3 A, 1 Ω Description This N-Channel enhancement mode power MOSFET is produ

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FCP7N60 / FCPF7N60 600V N-Channel MOSFET SuperFET FCP7N60 / FCPF7N60 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.53Ω • Ultra

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FCPF7N60NT — N-Channel SupreMOS® MOSFET FCPF7N60NT N-Channel MOSFET 600 V, 6.8 A, 0.52 Ω Features • Typ RDS(on) = 460mΩ • Ultra Low Gate Charge (typ.

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FDP7N60NZ / FDPF7N60NZ N-Channel UniFETTM II MOSFET March 2013 FDP7N60NZ / FDPF7N60NZ N-Channel UniFETTM II MOSFET 600 V, 6.5 A, 1.25  Features •

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FQP7N60-FQPF7N60 600V,7A N-Channel MOSFET General Description Product Summary The FQP7N60 & FQPF7N60 have been fabricated using an advanced high vo

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 6.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance

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www.DataSheet4U.com FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK January 2006 FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK Features • Low sat

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www.DataSheet4U.com FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK May 2006 FGPF7N60RUFD 600V, 7A RUF IGBT CO-PAK Features • High speed switching • Low satu

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP7N60/

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP7N60/

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