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FCPF7N60NT MOSFET

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Description

FCPF7N60NT * N-Channel SupreMOS® MOSFET FCPF7N60NT N-Channel MOSFET 600 V, 6.8 A, 0.52 Ω .
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling proce.

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Features

* Typ RDS(on) = 460mΩ
* Ultra Low Gate Charge (typ. Qg = 17.8 nC)
* Low Effective Output Capacitance (typ. Coss(eff. ) = 91 pF)
* 100% Avalanche Tested

Applications

* such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D GDS TO-220F G MOSFET Maximum Ratings TC = 25oC unless otherwise noted. S Symbol VDSS VGSS ID IDM EAS

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