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FCPF16N60 - N-Channel MOSFET

FCPF16N60 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor FCPF16N60 *.

FCPF16N60 Features

* Drain-source on-resistance: RDS(on) ≤ 0.26Ω@10V
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FCPF16N60 Applications

* Be suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 16 IDM D

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Datasheet Details

Part number
FCPF16N60
Manufacturer
INCHANGE
File Size
217.75 KB
Datasheet
FCPF16N60-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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