FCPF11N65 650V N-Channel MOSFET

Fairchild Semiconductor

Description

FCPF11N65 * N-Channel SuperFET® MOSFET February 2015 FCPF11N65 N-Channel SuperFET® MOSFET 650 V, 11 A, 380 mΩ .
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance tech.

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Datasheet Specifications

Part number: FCPF11N65
Manufacturer: Fairchild Semiconductor
File Size: 524.45 KB
Datasheet: FCPF11N65-FairchildSemiconductor.pdf
Description: 650V N-Channel MOSFET

Features

* Typ. RDS(on) = 320 mΩ
* Ultra Low Gate Charge (Typ. Qg = 40 nC)
* Low Effective Output Capacitance (Typ. Coss(eff. ) = 95 pF)

Applications

* such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. D GDS TO-220F Absolute Maximum Ratings Symbol Parameter VDSS ID IDM Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed VGSS EAS IAR EAR d

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FCPF11N65 650V N-Channel MOSFET Fairchild Semiconductor

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