Datasheet Details
- Part number
- FCPF11N65
- Manufacturer
- Fairchild Semiconductor
- File Size
- 524.45 KB
- Datasheet
- FCPF11N65-FairchildSemiconductor.pdf
- Description
- 650V N-Channel MOSFET
FCPF11N65 Description
FCPF11N65 * N-Channel SuperFET® MOSFET February 2015 FCPF11N65 N-Channel SuperFET® MOSFET 650 V, 11 A, 380 mΩ .
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance tech.
FCPF11N65 Features
* Typ. RDS(on) = 320 mΩ
* Ultra Low Gate Charge (Typ. Qg = 40 nC)
* Low Effective Output Capacitance (Typ. Coss(eff. ) = 95 pF)
FCPF11N65 Applications
* such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. D
GDS
TO-220F
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
IDM
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
VGSS EAS IAR EAR d
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