FCPF190N60-F152 Datasheet, Mosfet, ON Semiconductor

FCPF190N60-F152 Features

• Mosfet
• 650 V @TJ = 150°C
• Max. RDS(on) = 199 mΩ
• Ultra low gate charge (typ. Qg = 57 nC)
• Low effective output capacitance (typ. Coss.eff = 160 pF)

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Part number:

FCPF190N60-F152

Manufacturer:

ON Semiconductor ↗

File Size:

1.58MB

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📄 Datasheet

Description:

N-channel mosfet. N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ Features

650 V @TJ = 150°C

Max. RDS(on) = 199 mΩ

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FCPF190N60-F152

ON Semiconductor

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