FCPF190N65S3L1 Datasheet - ON Semiconductor

Power MOSFET

FCPF190N65S3L1 Features

* 700 V @ TJ = 150°C

* Typ. RDS(on) = 165 mW

* Ultra Low Gate Charge (Typ. Qg = 30 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

FCPF190N65S3L1 General Description

SUPERFET III MOSFET is ON Semiconductor’s brand *new high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss.

FCPF190N65S3L1 Datasheet (286.66 KB)