FCPF190N65S3R0L Datasheet - ON Semiconductor

N-Channel MOSFET

FCPF190N65S3R0L Features

* 700 V @ TJ = 150°C

* Typ. RDS(on) = 159 mW

* Ultra Low Gate Charge (Typ. Qg = 33 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF)

* 100% Avalanche Tested

* This Device is Pb

* Free and is RoHS Compliant Applications

* C

FCPF190N65S3R0L General Description

SUPERFET III MOSFET is ON Semiconductor’s brand *new high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss.

FCPF190N65S3R0L Datasheet (380.65 KB)