PF8N60 Datasheet | Specifications & PDF Download

FQP8N60C/FQPF8N60C FQP8N60C/FQPF8N60C 600V N-Channel MOSFET QFET® General Description These N-Channel enhancement mode power field effect transisto

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FQP8N60/FQPF8N60 600V N-Channel MOSFET Features ■ 7.5A,600V,RDS(on)=1.0Ω@VGS=10V ■ Low gate charge ■ Low Crss (typical 23pF) ■ Fast switching ■ 100%

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FQPF8N60C — N-Channel QFET® MOSFET FQPF8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω November 2013 Description These N-Channel enhancement mode

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FQP8N60/FQPF8N60 600V,8A N-Channel MOSFET General Description Product Summary The FQP8N60 & FQPF8N60 have been fabricated using an advanced high vo

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FQPF8N60CF — N-Channel QFET® FRFET® MOSFET December 2013 FQPF8N60CF N-Channel QFET® FRFET® MOSFET 600 V, 6.26 A, 1.5 Ω Description Features This

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FDPF8N60ZUT — N-Channel UniFETTM II Ultra FRFETTM MOSFET FDPF8N60ZUT N-Channel UniFETTM II Ultra FRFETTM MOSFET 600 V, 6.5 A, 1.35 Ω November 2013

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification FQPF8N60 ·FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source V

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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FQP8N60/FQPF8N60 600V N-Channel MOSFET Features ■ 7.5A,600V,RDS(on)=1.0Ω@VGS=10V ■ Low gate charge ■ Low Crss (typical 23pF) ■ Fast switching ■ 100% A

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