Passivation Datasheet | Specifications & PDF Download

EM513G Thru EM518G General Purpose Rectifiers Glass Passivation Junction DO-41 Features ‧High current capability ‧High surge current capability ‧Low

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AG 12A … AG 12M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nenn

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MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR1AM-8 LOW POWER USE PLANAR PASSIVATION TYPE BCR1AM-8 OUTLINE DRAWING φ5.0 MAX 4.4 Dimensions in mm 2 VOLTAGE

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AG 12A … AG 12M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nenn

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AG 6A … AG6M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nennstr

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AG 12A … AG 12M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nenn

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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR8AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR8AM OUTLINE DRAWING 10.5 MAX 3.2±0.2 Dim

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AG 12A … AG 12M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nenn

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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR10C MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR10C OUTLINE DRAWING Dimensions in mm (1

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EM513G Thru EM518G General Purpose Rectifiers Glass Passivation Junction DO-41 Features ‧High current capability ‧High surge current capability ‧Low

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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR08AS LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR08AS OUTLINE DRAWING Dimensions in mm 4.4

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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR6CM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR6CM OUTLINE DRAWING 10.5 MAX 3.2±0.2 Dim

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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR8PM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE CR8PM OUTLINE DRAWING 10.5 MAX 5.2 1.2 Dimensio

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MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR25A, BCR25B MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE BCR25A, BCR25B OUTLINE DRAWING 17 Dime

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AG 12A … AG 12M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nenn

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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR20F MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR20F OUTLINE DRAWING Dimensions in mm 3

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AG 3A … AG3M Silicon Rectifier Cells with polysiloxan passivation Silizium-Gleichrichterzellen mit Polysiloxan-Passivierung Nominal current – Nennstr

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FR801S Thru FR807S   .129(3.3)  .1(2.54)    .403(10.26)  .385(9.8) .153(3.9)  .145(3.7)  .189(4.82)  .173(4.4)  .055(1.4) .043(1.1)    .624(15.8

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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR04AM LOW POWER USE GLASS PASSIVATION TYPE CR04AM OUTLINE DRAWING φ5.0 MAX 4.4 Dimensions in mm 2 VOLTAGE

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