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Leshan Radio Company
L2SC2411KQLT1G - Medium Power Transistor NPN silicon
LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon FEATURE ƽEpitaxial planar type ƽComplementary to L2SA1036K www.DataSheet4U.ƽcoPmb-Fre.
Leshan Radio Company
L2SC2412KQLT3G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • We declare that the material of product compliance with RoHS requirements. • S- .
Leshan Radio Company
LMBTH10QLT1 - Transistors
LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR LMBTH10QLT1 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating www.DataSheet4U.com Collector–Em.
Leshan Radio Company
L2SD1781KQLT1G - Medium Power Transistor
LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor (32V, 0.8A) L2SD1781K*LT1www.DataSheet4U.com FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V .
Leshan Radio Company
L2SB1197KQLT1G - Low Frequency Transistor PNP Silicon
LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197K*LT1 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. www.Da.
Leshan Radio Company
L9012QLT1G - General Purpose Transistors
General Purpose Transistors LESHAN RADIO COMPANY, LTD. PNP Silicon FEATURE We declare that the material of product compliance with RoHS requirements.
Leshan Radio Company
L8050HQLT1G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC =1.5 A. ƽEpitaxial planar ty.
Leshan Radio Company
L8550HQLT1G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽHigh current capacity in compact package. ƽEpitaxial planar type. ƽPNP co.
Leshan Radio Company
L8550QLT1G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE We declare that the material of product compliance with RoHS requirements..
Leshan Radio Company
L8050QLT1 - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC = 0.8A. ƽEpitaxial planar t.
Leshan Radio Company
L8050QLT1G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC = 0.8A. ƽEpitaxial planar t.
Leshan Radio Company
L8550QLT1 - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE Pb-Free Package is available. ORDERING INFORMATION Device Package L85.
WILLAS
2SA812QLT1 - General Purpose Transistors
WILLAS 2SA812xLTF1MT1H2R0U-M+ 1.0AGSeURnFeArCaE lMPOUuNrTpSoCHsOeTTTKYraBnARsRiIsERtoRErsCTIFIERS -20V- 200V FM1200-M+ SOD-123+ PACKAGE Pb Free P.
QLT
A41ST24240MN - FLEX 24V High Power Miniature - Led 3014
LED Strips FLEX 24V High Power Miniature - Led 3014 18 Watt/m CV V I IP 20 CRI>80 EMC M M F ta -10°÷ +40°C II 25 mm 240 Led/m 1,5 mm 8 mm S.
QLT
A41ST24240MB - FLEX 24V High Power Miniature - Led 3014
LED Strips FLEX 24V High Power Miniature - Led 3014 18 Watt/m CV V I IP 20 CRI>80 EMC M M F ta -10°÷ +40°C II 25 mm 240 Led/m 1,5 mm 8 mm S.
WILLAS
2SB1197KQLT1 - Low Frequency Transistor
WILLAS Low Frequency Transistor • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. FM1.
WILLAS
2SC2411KQLT1 - Medium Power Transistor
FM120-M+ 2SC2411KxLT1 THRU Medium Power Transistor FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V WILLAS SOD-123+ PACKAGE Pb F.
WILLAS
2SC2412KQLT1 - General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE General Purpose Transistors NPN Silicon Pb-Free package is available desig.
LRC
L2SA1576AQLT1G - General Purpose Transistors
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon z We declare that the material of product compliance with RoHS requirements. ORDER.