QLT Datasheet | Specifications & PDF Download

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC = 0.8A. ƽEpitaxial planar t

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE We declare that the material of product compliance with RoHS requirements.

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC = 0.8A. ƽEpitaxial planar ty

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC = 0.8A. ƽEpitaxial planar t

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General Purpose Transistors LESHAN RADIO COMPANY, LTD. PNP Silicon FEATURE We declare that the material of product compliance with RoHS requirements

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LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series FFeatures S-L2SA1036KQLT1G Series

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General Purpose Transistors LESHAN RADIO COMPANY, LTD. NPN Silicon FEATURE We declare that the material of product compliance with RoHS requirements

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LED Strips FLEX 24V High Power Miniature - Led 3014 18 Watt/m CV V I IP 20 CRI>80 EMC M M F ta -10°÷ +40°C II 25 mm 240 Led/m 1,5 mm 8 mm S

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LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor z Features 1.High transition frequency.(Typ.fT=3.2GHz) 2.Small rbb`Cc and high gain.(

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽComplementary to L9014. ƽWe declare that the material of product complian

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC =1.5 A. ƽEpitaxial planar ty

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LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036K*LT1 www.DataSheet4U.com FFeatures 1) Large IC. ICMax. = *500mA 2) Low

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LED Strips FLEX 24V High Power Miniature - Led 3014 18 Watt/m CV V I IP 20 CRI>80 EMC M M F ta -10°÷ +40°C II 25 mm 240 Led/m 1,5 mm 8 mm S

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LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor z Features 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb`Cc and high gain.

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • We declare that the material of product compliance with RoHS requirements. • S-

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1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE General Purpose Transistors NPN Silicon Pb-Free package is available desig

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon z We declare that the material of product compliance with RoHS requirements. ORDER

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Fr

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽComplementary to L9014. ƽ We declare that the material of product complia

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