QLT Datasheet | Specifications & PDF Download

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412K*LT1 • Pb−Free Package is Available. www.DataSheet4U.com 3 COLLECTOR

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LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197K*LT1 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. www.Da

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE We declare that the material of product compliance with RoHS requirements.

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LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197K*LT1 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. www.Da

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Fr

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LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series PNP Silicon S-L2SB1197KQ LT1G Series FEATURE ƽHigh current capacity in

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LESHAN RADIO COMPANY, LTD. Medium Power Transistor (32V, 0.8A) L2SD1781KQLT1G L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series FFeatures 1) Very low V

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LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor z Features 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb`Cc and high gain.

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412K*LT1 • Pb−Free Package is Available. www.DataSheet4U.com 3 COLLECTOR

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LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series FFeatures S-L2SA1036KQLT1G Series

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LED Strips FLEX 24V High Power Miniature - Led 3014 18 Watt/m CV V I IP 20 CRI>80 EMC M M F ta -10°÷ +40°C II 25 mm 240 Led/m 1,5 mm 8 mm S

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon z We declare that the material of product compliance with RoHS requirements. ORDER

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽPb-Fr

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812QLT1G Series FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. S-L2SA812Q

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LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor z Features 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb`Cc and high gain.

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LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor z Features 1.High transition frequency.(Typ.fT=3.2GHz) 2.Small rbb`Cc and high gain.(

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LED Strips FLEX 24V High Power Miniature - Led 3014 18 Watt/m CV V I IP 20 CRI>80 EMC M M F ta -10°÷ +40°C II 25 mm 240 Led/m 1,5 mm 8 mm S

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • We declare that the material of product compliance with RoHS requirements. • S-

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features z We declare that the material of product compliance with RoHS requireme

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LED Strips FLEX 24V High Power Miniature - Led 3014 18 Watt/m CV V I IP 20 CRI>80 EMC M M F ta -10°÷ +40°C II 25 mm 240 Led/m 1,5 mm 8 mm S

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