R550 Datasheet | Specifications & PDF Download

PD - 9.1610B IRFR/U5505 HEXFET® Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR5505) Straight Lead (IRFU5505) Advan

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The NDR550 is a true one-port, surface-acoustic-wave ( SAW) resonator in a surfacemount ceramic QCC8C case. It provides reliable, fundamental-mode, qu

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SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 5.0 Ampere FEATURES * * * * * High reliability Low switching loss Low forward voltage

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www.DataSheet4U.com 5A Schottky Barrier Rectifiers TSR520 – TSR5100 5A Schottky Barrier Rectifiers Features • • • • • Low Forward Voltage Drop High

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MUR510 THRU MUR560 5.0 A Super Fast Rectifiers -; ® VOLTAGE RANGE 100 to 600 Volts  CURRENT FEATURES 5.0 Ampere * Low forward voltage drop T

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DR / DRL series | Features | • Small size but large capacity • Low ESR • Pb Free and RoHS Compliant | Application | • Solar voltaic applications (e.g

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TPA110R550A Wuxi Unigroup Microelectronics Co.,Ltd 1100V Super-junction Power MOSFET Description 1100V Super-junction Power MOSFET Super-junction powe

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TSD50R550S1/TSU50R550S1 500V 7.6A N-Channel SJ-MOSFET TSD50R550S1/TSU50R550S1 500V 7.6A N-Channel SJ-MOSFET General Description Features Truesemi

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SR520 THRU SR5100 SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20 to 100 Volts FORWARD CURRENT 5.0 Ampere FEATURES DO-201AD（DO-27） Low forward volta

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AUTOMOTIVE GRADE Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Sw

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Miniature Surface Mount LED—OPR5200, OPR5200H Phototransistor—OPR5500 Features:  Stackable on 2 mm centers  Ver cal or horizontal moun ng  Aut

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DR / DRL series | Features | • Small size but large capacity • Low ESR • Pb Free and RoHS Compliant | Application | • Solar voltaic applications (e.g

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DRM series | Features | • Operating voltage : 5.0V, 7.5V • 60/70℃ 1,000h, · Pb Free and RoHS Compliant | Applications | • Less than 100mA from sec to

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PHOTOMULTlPLlER TUBE R5505 Stable Operation in High Magnetic Fields beyond 1 Tesla 25 mm (1 Inch) Diameter, Proximity Photocathode and Fine Mesh Dyno

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Semiconductor SUR550J Epitaxial planar PNP silicon transistor 0.65 Typ. Description • Dual chip digital transistor Features • Two SRA2207chips in

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  AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  P-Channel  Dynamic dv/dt Rating  150°C Operating Temperature  Fast

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