RA36 Datasheet | Specifications & PDF Download

GTRA360502M Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Description The GTRA360502M houses two GaN-on-SiC power tra

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RA36 / SMRA36 Cascadable Amplifier 100 to 2000 MHz Rev. V3 Features • HIGH GAIN-THREE STAGES: 24.0 dB (TYP.) • LOW VSWR: 1.4:1 (TYP.) • MEDIUM OUTP

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GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Description The GTRA364002FC is a 400-watt (PSAT) GaN on S

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Chip Silicon Rectifier MURA305G THRU MURA3100G 3.0A Surface Mount High Effciency Rectifiers - 50V-1000V Features • Batch process design, excellent p

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RA36 / SMRA36 Cascadable Amplifier 100 to 2000 MHz Rev. V3 Features • HIGH GAIN-THREE STAGES: 24.0 dB (TYP.) • LOW VSWR: 1.4:1 (TYP.) • MEDIUM OUTP

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GTRA362002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 200 W, 48 V, 3400 – 3600 MHz Description The GTRA362002FC is a 200-watt (P3dB) GaN on S

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