RAS SERIES RAS 0.5 5 15.0 0.3 19.2 0.2 15.4 0..
Advanced Micro Devices
Am28F010A - 1 Megabit CMOS 12.0 Volt Bulk Erase Flash Memory
FINAL Am28F010A 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS s High perfor.
ATMEL Corporation
AT27C800 - 8-Megabit 512K x 16 or 1024K x 8 UV Erasable EPROM
AT27C800 Features • • • • • Read Access Time - 100 ns Word-wide or Byte-wide Configurable 8-Megabit Flash and Mask ROM Compatable Low Power CMOS Opera.
Winbond
W27C010 - 128K x 8 ELECTRICALLY ERASABLE EPROM
W27C010 128K × 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27C010 is a high speed, low power Electrically Erasable and Programmable Read .
Mitsubishi
M5M29FT800RV-12 - 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD .
ATMEL
27C800 - 8-Megabit 512K x 16 or 1024K x 8 UV Erasable EPROM
AT27C800 Features • • • • • Read Access Time - 100 ns Word-wide or Byte-wide Configurable 8-Megabit Flash and Mask ROM Compatable Low Power CMOS Opera.
ETC
CAT93C46P - C-MOS 1024(64x16/128x8)BIT ELECTRICALLY ERASABLE PROM
********** CAT93C46P IL08 C-MOS 1024(64x16/128x8)BIT ELECTRICALLY ERASABLE PROM - TOP VIEW - CS IN 1 SK IN 2 DI IN 3 DOOUT 4 V DD(+5V) 8 NC 7 ORG .
Advanced Micro Devices
AM28F010 - 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory
FINAL Am28F010 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum acces.
SUN HOLD ELECTRIC
RAS-12-10-M - RELAY
RAS SERIES RAS 0.5 5 15.0 0.3 19.2 0.2 15.4 0.2 12 12.3 2 .
SUN HOLD ELECTRIC
RAS-12-10-B - RELAY
RAS SERIES RAS 0.5 5 15.0 0.3 19.2 0.2 15.4 0.2 12 12.3 2 .
SUN HOLD ELECTRIC
RAS-12-10-A - RELAY
RAS SERIES RAS 0.5 5 15.0 0.3 19.2 0.2 15.4 0.2 12 12.3 2 .
SUN HOLD ELECTRIC
RAS-1210 - RELAY
RELAY SPECIFICATIONS TYPE : RAS-1210 FT 1. Dimensions Drawing No. RAS-106FT 2. Coil Data 2-1. Normal voltage 12VDC 2-2. Coil resistance 400±40.
Winbond
W27E010 - 128K x 8 ELECTRICALLY ERASABLE EPROM
W27E010 128K × 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27E010 is a high speed, low power Electrically Erasable and Programmable Read .
Winbond
W27L010 - 128K 8 ELECTRICALLY ERASABLE EPROM
Preliminary W27L010 128K × 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27L010 is a high speed, low power consumption Electrically Erasable .
Mitsubishi
M5M27C202JK-12 - 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
.
Mitsubishi
M5M27C202K-12 - 2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
.
Mitsubishi
M5M29FB800RV-12 - 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD .
ICT
PEEL20CG10-15 - (PEEL20CG10-12/-15) CMOS Programmable Electrically Erasable Logic Device
( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com .
ICT
PEEL20CG10-12 - (PEEL20CG10-12/-15) CMOS Programmable Electrically Erasable Logic Device
( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com .