RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Po.
RJP30E2 - N-Channel Power MOSFET
RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • Trench gate technology (G5H series) • Low collector to emitter saturation v.RJP30E2DPP-M0 - N-Channel Power MOSFET
Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • • Trench gate technology (G5H series) Low coll.RJP30E2DPK-M0 - N-Channel Power MOSFET
Preliminary Datasheet RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • Trench gate technology (G5H series) Low collec.