RJP30H1DPD Silicon N Channel IGBT High speed power.
RJP30H1DPD - N-Channel IGBT
Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching Features Trench gate and thin wafer technology (G6H-II ser.RJP30H1 - N-Channel IGBT
RJP30H1DPD Silicon N Channel IGBT High speed power switching Features Trench gate and thin wafer technology (G6H-II series) High speed switching:.RJP30H1DPP-M0 - N-Channel IGBT
Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching Features Trench gate and thin wafer technology (G6H-I.