Type RST RSTD1005 RoHS Compliant Time Lag Radial.
KBP310 - Bridge Rectifier
SEMICONDUCTOR TECHNICAL DATA KBP3005 ~ KBP310 Bridge Rectifier ■ Features ● Io 3A ● VRRM 50V~1000V ● Glass passivated chip ● High surge forwa.GN25L95 - 2.5 Gbps CMOS Burst Mode Laser Driver & Limiting Post Amplifier
GN25L95 2.5 Gbps CMOS Burst Mode Laser Driver & Limiting Post Amplifier with On-Chip Digital Diagnostic Monitoring Main Features • • • • • • • • • • .SF1565 - Highly Integrated Current Mode PWM Controller
SF1565 Highly Integrated Current Mode PWM Controller FEATURES ◆ Built-in Soft Start Function ◆ Very Low Startup Current ◆ Frequency Reduction and Burs.T25S32 - 32M-BIT SPI NOR FLASH
Shenzhen First-Rank Technology Co., Ltd SPECIFICATION T25S32 Version 2.0 reserves the right to change this documentation without prior notice. Shenz.T24C02A - EEPROM
Shenzhen First-Rank Technology Co., Ltd SPECIFICATION T24C02A/T24C04A/T24C08A/T24C16A Version 2.0 reserves the right to change this documentation wit.CRST055N07N - SkyMOS1 N-MOSFET
() CRST055N07N,CRSS053N07N SkyMOS1 N-MOSFET 70V, 4.6mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(o.CY7C1523AV18 - 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features ■ ■ ■ ■ ■ Functional Description Th.CRST128N10L2 - SkyMOS2 N-MOSFET
() CRST128N10L2 SkyMOS2 N-MOSFET 100V, 11.4mΩ, 60A Features • Uses CRM(CQ) advanced SkyMOS2 technology • Extremely low on-resistance RDS(on) • Excel.SF5590 - PWM Controller
SF5590 HV-mWTM、η-BalanceTM PWM Controller Programmable Fsw FEATURES ◆ Programmable Switching Frequency ◆ Proprietary HV-mWTM to Achieve Less than 50.CY7C1313BV18 - (CY7C1x1xBV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
CY7C1311BV18 CY7C1911BV18 CY7C1313BV18 CY7C1315BV18 18-Mbit QDR™-II SRAM 4-Word Burst Architecture Features • Separate Independent Read and Write dat.MBR2045CTG - Schottky Barrier Rectifier
CREAT BY ART MBR2040CTG THRU MBR20200CTG 20.0 AMPS. Schottky Barrier Rectifiers - - 12 3 1 2 3 1.71 Marking Diagr.CRST150N10N2 - SkyMOS2 N-MOSFET
() CRST150N10N2 SkyMOS2 N-MOSFET 100V, 12.2mΩ, 80A Features • Uses CRM(CQ) advanced SkyMOS2 technology • Extremely low on-resistance RDS(on) • Excel.CRST024N10N3Z - SkyMOS3 N-MOSFET
() CRST024N10N3Z,CRSS022N10N3Z SkyMOS3 N-MOSFET 100V, 2mΩ, 180A Features • Uses CRM(CQ) advanced SkyMOS3 technology • Extremely low on-resistance RD.5.0SMCJ120CAG - SMD Transient Voltage Suppressor
SMD Transient Voltage Suppressor 5.0SMCJ SERIES 5000W Surface Mount Transient Volatge Suppressors - 11.0V-170V Features • 3000W peak pulse power cap.B0520 - 0.4 amp Schottky Low Forward Voltage Rectifier: B0520WS -- First SOD-323 Rectifier Product!
.5.0SMCJ48CAG - SMD Transient Voltage Suppressor
SMD Transient Voltage Suppressor 5.0SMCJ SERIES 5000W Surface Mount Transient Volatge Suppressors - 11.0V-170V Features • 3000W peak pulse power cap.MBR4045PTG - 40.0 AMPS. Schottky Barrier Rectifiers
CREAT BY ART MBR4040PTG THRU MBR40200PTG 40.0 AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD Features Metal silicon junction, majority carrier cond.CRST037N10N - SkyMOS1 N-MOSFET
() CRST037N10N,CRSS035N10N SkyMOS1 N-MOSFET 100V, 3mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(on.CRST041N08N - SkyMOS1 N-MOSFET
() CRST041N08N, CRSS038N08N SkyMOS1 N-MOSFET 85V, 3.4mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS(.CRST100N06L2 - SkyMOS2 N-MOSFET
() CRST100N06L2 SkyMOS2 N-MOSFET 60V, 8.4mΩ, 80A Features • Uses CRM(CQ) advanced SkyMOS2 technology • Extremely low on-resistance RDS(on) • Excelle.