RU3 - RU3C PRV : 400 - 1000 Volts Io : 1.5 Amperes.
IRU3007 - 5-BIT PROGRAMMABLE SYNCHRONOUS BUCK CONTROLLER IC
Data Sheet No. PD94142 IRU3007 5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRONOUS, ADJUSTABLE LDO AND 200mA ON-BOARD LDO FEATURES Provides Single .RU30120R - N-Channel Advanced Power MOSFET
RU30120R N-Channel Advanced Power MOSFET MOSFET Features • 30V/120A, RDS (ON) =2.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.3mΩ (Typ.) @ VGS=4.5V • Super High .RU3013H - N-Channel Advanced Power MOSFET
RU3013H N-Channel Advanced Power MOSFET MOSFET Features • 30V/11A, RDS (ON) =16mΩ (Typ.) @ VGS=10V RDS (ON) =24mΩ (Typ.) @ VGS=4.5V • Super High Dens.RU3AM - FAST RECOVERY RECTIFIER DIODES
RU3AM - RU3M PRV : 400 - 600 Volts Io : 1.5 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low .LRU3000 - High Brightness LED Lamp
www.DataSheet4U.com • •φ • λ φ θ φ ± θ • .CZRU3V6B - SMD Zener Diode
SMD Zener Diode SMD Diodes Specialist CZRU2V4B Thru CZRU39VB Voltage 2.4 to 39 Volts Power 150 mWatts Features 150mW Power Dissipation. High Voltages.RU3089L - N-Channel Advanced Power MOSFET
RU3089L N-Channel Advanced Power MOSFET MOSFET Features • 30V/89A, RDS (ON) =3.8mΩ (Typ.)@VGS=10V RDS (ON) =5mΩ (Typ.)@VGS=4.5V • Super High Dense Ce.RU30E4B - N-Channel Advanced Power MOSFET
RU30E4B N-Channel Advanced Power MOSFET Features • 30V/4A, RDS (ON) =30mΩ(Typ.)@VGS=10V RDS (ON) =55mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design .IRU3004 - 5-BIT PROGRAMMABLE SYNCHRONOUS BUCK CONTROLLER IC
Data Sheet No. PD94140 IRU3004 5-BIT PROGRAMMABLE SYNCHRONOUS BUCK CONTROLLER IC WITH DUAL LDO CONTROLLER FEATURES Meets latest VRM 8.4 specificatio.RU3010H - N-Channel Advanced Power MOSFET
RU3010H N-Channel Advanced Power MOSFET MOSFET Features • 30V/8A, RDS (ON) =18mΩ (Typ.) @ VGS=10V RDS (ON) =40mΩ (Typ.) @ VGS=4.5V • Super High Dense.RU3041M2 - N-Channel Advanced Power MOSFET
RU3041M2 N-Channel Advanced Power MOSFET Features • 30V/40A, RDS (ON) =4.2mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(Typ.)@VGS=4.5V RDS (ON) =10mΩ(Typ.)@VGS=2..RU30105L - N-Channel Advanced Power MOSFET
RU30105L N-Channel Advanced Power MOSFET MOSFET Features • 30V/110A, RDS (ON) =3.2 mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Res.RU3081R - N-Channel Advanced Power MOSFET
RU3081R N-Channel Advanced Power MOSFET MOSFET Features • 30V/100A, RDS (ON) =3 mΩ(Typ.)@VGS=10V RDS (ON) =4.3 mΩ(Typ.)@VGS=4.5V • Super High Dense C.RU3050L - N-Channel Advanced Power MOSFET
RU3050L N-Channel Advanced Power MOSFET MOSFET Features • 30V/55A, RDS (ON) =7 mΩ(Typ.)@VGS=10V RDS (ON) =12 mΩ(Typ.)@VGS=4.5V • Super High Dense Cel.RU3020H - N-Channel Advanced Power MOSFET
RU3020H N-Channel Advanced Power MOSFET MOSFET Features • 30V/12A, RDS (ON) =9.5m (Typ.) @ VGS=10V RDS (ON) =15m (Typ.) @ VGS=4.5V • Super High Den.RU30160R - N-Channel Advanced Power MOSFET
RU30160R N-Channel Advanced Power MOSFET MOSFET Features • 30V/160A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resi.