RU3 Datasheet | Specifications & PDF Download

RU3080M N-Channel Advanced Power MOSFET Features • 30V/80A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =3mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design

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RU30L30M P-Channel Advanced Power MOSFET MOSFET Features • -30V/-30A, RDS (ON) =12mΩ(Typ.)@VGS=-10V RDS (ON) =20mΩ(Typ.)@VGS=-4.5V • Super High Dense

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RU3 - RU3C PRV : 400 - 1000 Volts Io : 1.5 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low r

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www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 RU3 - RU3A PRV : 400 - 600 Volts Io : 1.5 Amperes FAST RECOVERY RECTIFIER DIODES D

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APT5010JVRU3 500V 44A 0.100Ω S G D A POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This ne

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SMD Zener Diode SMD Diodes Specialist CZRU2V4B Thru CZRU39VB Voltage 2.4 to 39 Volts Power 150 mWatts Features 150mW Power Dissipation. High Voltages

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SMD Zener Diode SMD Diodes Specialist CZRU2V4B Thru CZRU39VB Voltage 2.4 to 39 Volts Power 150 mWatts Features 150mW Power Dissipation. High Voltages

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Data Sheet No. PD94148 revA IRU3034 & (PbF) 8-PIN PWM SWITCHER CONTROLLER IC WITH CURRENT LIMITING DESCRIPTION The IRU3034 IC provides a low cost swi

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RU3070L N-Channel Advanced Power MOSFET Features • 30V/70A, RDS (ON) =3.3mΩ(Typ.)@VGS=10V RDS (ON) =5mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design

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sales.Mr.wang13826508770 www.sztssd.com RU3400B N-Channel Advanced Power MOSFET Features • 30V/6A, RDS (ON) =26mΩ(Typ.)@VGS=10V RDS (ON) =30mΩ(Typ.)

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RU30E4B-VB RU30E4B-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 10 V 30 0.033 at V

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RU3520H-VB RU3520H-VB Datasheet N-Channel 40-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0038 at VGS = 10 V 40 0.0057 at

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RU3091M N-Channel Advanced Power MOSFET Features • 30V/90A, RDS (ON) =2.8mΩ(Typ.)@VGS=10V RDS (ON) =3.4mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Desi

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RU30105L N-Channel Advanced Power MOSFET MOSFET Features • 30V/110A, RDS (ON) =3.2 mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Res

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RU3081L N-Channel Advanced Power MOSFET MOSFET Features • 30V/90A, RDS (ON) =2.6 mΩ(Typ.)@VGS=10V RDS (ON) =4.3 mΩ(Typ.)@VGS=4.5V • Super High Dense

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RU3081R N-Channel Advanced Power MOSFET MOSFET Features • 30V/100A, RDS (ON) =3 mΩ(Typ.)@VGS=10V RDS (ON) =4.3 mΩ(Typ.)@VGS=4.5V • Super High Dense C

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RU3050L N-Channel Advanced Power MOSFET MOSFET Features • 30V/55A, RDS (ON) =7 mΩ(Typ.)@VGS=10V RDS (ON) =12 mΩ(Typ.)@VGS=4.5V • Super High Dense Cel

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RU30291R N-Channel Advanced Power MOSFET MOSFET Features • 30V/290A, RDS (ON) =1.8mΩ(Typ.)@VGS=10V RDS (ON) =2.6mΩ(Typ.)@VGS=4.5V • Super High Dense

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