S1D-T Datasheet | Specifications & PDF Download

  ADV                                                                                      ADS1D60/80 4 Quadrants Triacs General Description This dev

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SURFACE MOUNT SUPER FAST RECTIFIER ES1A-A THRU ES1J-A The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surfa

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DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.43 mW, 253 A NTMFWS1D5N08X Features • Low QRR, Soft Recovery Bod

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DATA SHEET www.onsemi.com MOSFET – Power, N-Channel 80 V, 1.75 mW NVCR4LS1D7N08M7A Features • Typical RDS(on) = 1.31 mW at VGS = 10 V • Typical Qg(t

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HYG025N06LS1D Single N-Channel Enhancement Mode MOSFET Feature Pin Description  60V/160A RDS(ON)= 2.6 mΩ (typ.) @ VGS = 10V RDS(ON)= 3.8 mΩ (typ

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MOSFET - Power, Single N-Channel 100 V, 1.7 mW, 273 A NVMTS1D6N10MC Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize

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Suntan® Su® ES1A THRU ES1J SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere FEATU RE S ◆P

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MOSFET - Power, Single N-Channel, D2PAK7 60 V, 1.55 mW, 267 A NTBGS1D5N06C Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacit

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MOSFET - Power, Single N-Channel, TOLL 100 V, 1.8 mW, 265 A NVBLS1D7N10MC Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitan

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MOSFET - Power, Single N-Channel, TOLL 100 V, 1.5 mW, 300 A NVBLS1D5N10MC Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitan

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MOSFET – Power, N-Channel 80 V, 1.27 mW NVCR4LS1D3N08M7A Features • Typical RDS(on) = 1.0 mW at VGS = 10 V • Typical Qg(tot) = 172 nC at VGS = 10 V •

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Surface Mount General Purpose Rectifiers S1AFL, S1BFL, S1DFL, S1GFL, S1JFL, S1MFL, NRVS1AFL, NRVS1BFL, NRVS1DFL, NRVS1GFL, NRVS1JFL, NRVS1MFL S1MFL Se

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MOSFET - Power, Single N-Channel, WDFN8 25 V, 1.3 mW, 150 A NTTFS1D8N02P1E Features • Small Footprint for Compact Design • Low RDS(on) to Minimize C

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MOSFET - Power, Single N-Channel 40 V, 1.7 mW, 190 A NVMYS1D7N04C Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to M

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MOSFET - Power, Single N-Channel, TOLL 80 V, 1.53 mW, 298 A NTBLS1D5N08MC Features  Low RDS(on) to Minimize Conduction Losses  Low QG and Capacitan

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MOSFET - Power, Single N-Channel, STD Gate, m8FL 40 V, 1.43 mW, 178 A NTTFS1D4N04XM Features • Low RDS(on) to Minimize Conduction Losses • Low Capaci

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Technical Data Data Sheet N0159, Rev. E ES1A-ES1M SURFACE MOUNT SUPER FAST RECTIFIER ES1A-ES1M SMA Features  Glass Passivated Die Construction 

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MOSFET - Power, Single N-Channel, TOLL 80 V, 1.7 mW, 203 A NTBLS1D7N08H Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitanc

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