S2306 Datasheet | Specifications & PDF Download

Product Data Sheet August 5, 2008 High Power DC - 18GHz SPDT FET Switch • • • • • • • • TGS2306 Key Features and Performance DC - 18 GHz Frequency

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New N-Channel 20 V (D-S) MOSFET DTS2306 www.din-tek.jp PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.020 at VGS = 4.5 V 0.025 at VGS = 2.5 V ID (A) 6.

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S2306 N-channel SiC power MOSFET bare die VDSS RDS(on) (Typ.) ID 1200V 160mW 22A*1 Data Sheet lFeatures 1) Low on-resistance 2) Fast switching spe

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CES2306 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.6A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. RDS(ON) = 100m

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Green Product S T S 2306A Apr. 27 2010 V er1.1 S amHop Microelectronics C orp. N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S U

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ą TPS2306 DUAL SEQUENCING HOT SWAP POWER MANAGER D Wide Input Operating Range (2.75 V to 13.6 V) D Controls Ramp-Up Sequence and Slope, and Ramp-Down

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Green Product S T S 2306E J an. 10 2008 V er1.0 S amHop Microelectronics C orp. N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S

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S amHop Microelectronics C orp. S T S 2306 Apr,21 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V

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