STS2306 Datasheet - SamHop Microelectronics

STS2306 N-Channel Enhancement Mode Field Effect Transistor

S amHop Microelectronics C orp. S T S 2306 Apr,21 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m £[ ) Max ID 2.8A R DS (ON) S uper high dense cell design for low R DS (ON ). 45 @ V G S = 4.5V 60 @ V G S =2.5V R ugged and reliable. S OT-23 package. D S OT-23 D S G G S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =.

STS2306 Datasheet (617.36 KB)

STS2306 Datasheet Preview — Preview of STS2306 PDF

Datasheet Details

Part number:

STS2306

Manufacturer:

SamHop Microelectronics

File Size:

617.36 KB

Description:

N-channel enhancement mode field effect transistor.

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STS2306 N-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics

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