STS2306 - N-Channel Enhancement Mode Field Effect Transistor
S amHop Microelectronics C orp.
S T S 2306 Apr,21 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m £[ ) Max ID 2.8A R DS (ON) S uper high dense cell design for low R DS (ON ).
45 @ V G S = 4.5V 60 @ V G S =2.5V R ugged and reliable.
S OT-23 package.
D S OT-23 D S G G S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =
