STS2301 - P-Channel Enhancement Mode Field Effect Transistor
S amHop Microelectronics C orp.
S T S 2301 J UL.30 2004 ver1.1 P -C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) Max ID -3.4A R DS (ON) S uper high dense cell design for low R DS (ON ).
60 @ V G S = -4.5V 80 @ V G S = -2.5V 105 @ V G S = -1.8V R ugged and reliable.
S OT-23 package.
D S OT-23 D S G G S AB S OL UTE MAXIMUM R ATINGS (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Dra
