Datasheet Details
- Part number
- STS20N3LLH6
- Manufacturer
- STMicroelectronics ↗
- File Size
- 266.46 KB
- Datasheet
- STS20N3LLH6-STMicroelectronics.pdf
- Description
- N-channel MOSFET
STS20N3LLH6 Description
STS20N3LLH6 N-channel 30 V, 0.004 Ω, 20 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET .
t(s)This product utilizes the 6th generation of design
rules of ST’s proprietary STripFET™ technology,
ucwith a new gate structure.
STS20N3LLH6 Features
* Type
VDSS
RDS(on) max
ID
STS20N3LLH6
30 V 0.0047 Ω 20 A
t(s)
* RDS(on)
* Qg industry benchmark uc
* Extremely low on-resistance RDS(on) d
* High avalanche ruggedness ro
* Low gate drive power losses P
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