STS20N3LLH6 Datasheet (STMicroelectronics)

STS20N3LLH6, N-channel MOSFET

t(s)This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, ucwith a new gate structure.The resulting Power dMOSFET exhibits the lowest RDS(on) in all Obsolete Propackages.

SO-8 Figure 1.

Internal schematic diagram Table 1.

Device summary Order code STS20

STS20N3LLH6 Features

* Type VDSS RDS(on) max ID STS20N3LLH6 30 V 0.0047 Ω 20 A t(s)

* RDS(on)

* Qg industry benchmark uc

* Extremely low on-resistance RDS(on) d

* High avalanche ruggedness ro

* Low gate drive power losses P

* Very low switching gate charge leteApplication so

* Switching appl