STS26N3LLH6 Datasheet (STMicroelectronics)

STS26N3LLH6, N-channel Power MOSFET

This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

8 76 5 1 2 34 SO-8 Figure 1.

Internal schematic diagram Table 1.

Device summary Order code STS26N3LLH

STS26N3LLH6 Features

* Type STS26N3LLH6 VDSS 30 V RDS(on) max 0.0044 Ω

* RDS(on)

* Qg industry benchmark

* Extremely low on-resistance RDS(on)

* High avalanche ruggedness

* Low gate drive power losses

* Very low switching gate charge ID 26 A Applications

* Switching applications Descript