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STS26N3LLH6 N-channel Power MOSFET

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Description

STS26N3LLH6 N-channel 30 V, 0.0038 Ω, 26 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET .
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

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Features

* Type STS26N3LLH6 VDSS 30 V RDS(on) max 0.0044 Ω
* RDS(on)
* Qg industry benchmark
* Extremely low on-resistance RDS(on)
* High avalanche ruggedness
* Low gate drive power losses

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