STS25N3LLH6 Datasheet (STMicroelectronics)

STS25N3LLH6, Power MOSFET

This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter applications, where high power den

STS25N3LLH6 Features

* Type STS25N3LLH6

* VDSS 30 V RDS(on) max 0.0032 Ω ID 22 A RDS(on)

* Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge SO-8 Application

* Switching applications Figu