* Order code VDS STS10P3LLH6 -30 V
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate drive power loss RDS(on) max. 12 mΩ ID -12.5 A Applications
* Switching applications Description This device is a P-channel Power M
STS10P3LLH6 Datasheet (281.69 KB)
STS10P3LLH6
281.69 KB
P-channel power mosfet.
STS10P3LLH6
Datasheet
P-channel -30 V, 10 mΩ typ., -12.5 A, STripFET H6 Power MOSFET in an SO-8 package
5 8
4 1 SO-8
D(5, 6, 7, 8)
G(4)
S(1, 2, 3)
.
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