STS10P3LLH6 - P-channel Power MOSFET
This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure.
The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Product status link STS10P3LLH6 Product summary Order code STS10P3LLH6 Marking 10K3L Package SO-8 Packin
