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STS10P3LLH6 P-channel Power MOSFET

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Description

STS10P3LLH6 Datasheet P-channel -30 V, 10 mΩ typ., -12.5 A, STripFET H6 Power MOSFET in an SO-8 package 5 8 4 1 SO-8 D(5, 6, 7, 8) G(4) S(1, 2, 3) .
This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure.

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Features

* Order code VDS STS10P3LLH6 -30 V
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness

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