STS10P4LLF6 Datasheet, Mosfet, STMicroelectronics

STS10P4LLF6 Features

• Mosfet Order code VDS STS10P4LLF6 -40 V
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss RDS(on) ma

PDF File Details

Part number:

STS10P4LLF6

Manufacturer:

STMicroelectronics ↗

File Size:

323.13kb

Download:

📄 Datasheet

Description:

P-channel power mosfet. This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting P

STS10P4LLF6 Application

• Applications
• Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with

TAGS

STS10P4LLF6

STMicroelectronics

📁 Related Datasheet

STS10P3LLH6 - P-channel Power MOSFET (STMicroelectronics)
STS10P3LLH6 Datasheet P-channel -30 V, 10 mΩ typ., -12.5 A, STripFET H6 Power MOSFET in an SO-8 package 5 8 4 1 SO-8 D(5, 6, 7, 8) G(4) S(1, 2, 3) .

STS10PF30L - P-CHANNEL POWER MOSFET (STMicroelectronics)
.. P-CHANNEL 30V - 0.012 Ω - 10A SO-8 STripFET™ II POWER MOSFET Table 1: General Features TYPE STS10PF30L ■ ■ STS10PF30L Figure 1:.

STS100 - Multifunction Telecommunications Switch (Solid State Optronic)
STS100 Multifunction Telemunications Switch DESCRIPTION The STS100 bines two 1 Form A solid state relays and one optocoupler in a 16-pin SOIC p.

STS10100S - TRENCH SCHOTTKY BARRIER DIODE (JILIN SINO)
R TRENCH SCHOTTKY BARRIER DIODE STS10100S MAIN CHARACTERISTICS Package IF(AV) VRRM TJmax IFSM VF(max) 10A 100V 150 ℃ 150A 0.62V （@Tj=125℃） .

STS10DN3LH5 - Power MOSFETs (ST Microelectronics)
.. STS10DN3LH5 Dual N-channel 30 V, 0.019 Ω, 10 A, SO-8 STripFET™ V Power MOSFET Features Type STS10DN3LH5 ■ ■ ■ ■ ■ VDSS 30 V RDS.

STS10NF30L - N-CHANNEL PowerMESH MOSFET (ST Microelectronics)
® STS10NF30L N - CHANNEL 30V - 0.011Ω - 10A SO-8 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STS10NF30L s s V DSS 30 V R DS( on) < 0.0135 Ω ID 1.

STS10T06 - Low Vf Schottky Diode (STANSON)
STS10T06 Low Vf Schottky Diode 10.0A DESCRIPTION STS10T06 is designed with trench technology to provide excellent low Vf. Those devices are suitable f.

STS11NF30L - N-CHANNEL PowerMESH MOSFET (ST Microelectronics)
® STS11NF30L N-CHANNEL 30V - 0.009 Ω - 11A SO-8 LOW GATE CHARGE STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STS11NF30L s s s s s V DSS 30 V R DS(.

STS11NF3LL - N-CHANNEL PowerMESH MOSFET (ST Microelectronics)
® STS11NF3LL N-CHANNEL 30V - 0.009 Ω - 11A SO-8 LOW GATE CHARGE STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STS11NF3LL s s s s V DSS 30 V R DS(on.

STS123 - NPN Silicon Transistor (AUK)
Semiconductor STS123 NPN Silicon Transistor Features • • • • • Low saturation medium current application Extremely low collector saturation voltage .