* Order code VDS STS10P4LLF6 -40 V
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate drive power loss RDS(on) max. 15 mΩ ID -10 A Applications
* Switching applications Description This device is a P-channel Power MOS
STS10P4LLF6 Datasheet (323.13 KB)
STS10P4LLF6
323.13 KB
P-channel power mosfet.
STS10P4LLF6
Datasheet
P‑channel -40 V, 12.5 mΩ typ., -10 A STripFET F6 Power MOSFET in SO‑8 package
5 8
4 1 SO-8
D(5, 6, 7, 8)
G(4)
S(1, 2, 3)
AM0.
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