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STS10P4LLF6 P-Channel Power MOSFET

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Description

STS10P4LLF6 Datasheet P‑channel -40 V, 12.5 mΩ typ., -10 A STripFET F6 Power MOSFET in SO‑8 package 5 8 4 1 SO-8 D(5, 6, 7, 8) G(4) S(1, 2, 3) AM0.
This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure.

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Features

* Order code VDS STS10P4LLF6 -40 V
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness

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