STS2300 Datasheet - SamHop Microelectronics

STS2300 N-Channel Enhancement Mode Field Effect Transistor

S amHop Microelectronics C orp. S T S 2300 MAR . 10 2004 N-C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 3.8A R DS (ON) S uper high dense cell design for low R DS (ON ). 40 @ V G S = 4.5V 60 @ V G S = 2.5V 75 @ V G S = 1.8V R ugged and reliable. S OT-23 package. D S OT-23 D S G G S AB S OL UTE MAXIMUM R ATING (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C .

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Datasheet Details

Part number:

STS2300

Manufacturer:

SamHop Microelectronics

File Size:

580.23 KB

Description:

N-channel enhancement mode field effect transistor.

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STS2300 STS2300 N-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics

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