STS2300 - N-Channel Enhancement Mode Field Effect Transistor
S amHop Microelectronics C orp.
S T S 2300 MAR .
10 2004 N-C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 3.8A R DS (ON) S uper high dense cell design for low R DS (ON ).
40 @ V G S = 4.5V 60 @ V G S = 2.5V 75 @ V G S = 1.8V R ugged and reliable.
S OT-23 package.
D S OT-23 D S G G S AB S OL UTE MAXIMUM R ATING (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C
