* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D S OT 23-3L D S G G S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a
STS2302A
SamHop Microelectronics
99.98 KB
N-channel mosfet.
Green Product STS2302A Ver 1.1 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 20V ID 4A.
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