* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D S OT -23 D S G S G ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a
STS2305
SamHop Microelectronics
101.28 KB
P-channel enhancement mode field effect transistor.
Green Product
STS2305
Ver 1.0
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON).
📁 Related Datasheet
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.VBsemi.
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RDS(on) ()
ID (A)a
0.060 at VGS = - .
STS2301A - P-Channel Enhancement Mode Field Effect Transistor
(SamHop Microelectronics)
Green Product
STS2301A
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P-Channel Enhancement Mode Field Effect Transistor
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V DSS
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PRODUCT SUMMARY
V DSS
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FEAT.
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