STS2320 N-Channel Enhancement Mode Field Effect Transistor

Description

SamHop Microelectronics Corp.STS2320 Oct .29 2004 V1.1 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 20V .

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Datasheet Specifications

Part number: STS2320
Manufacturer: ETC
File Size: 603.85 KB
Datasheet: STS2320_ETC.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Features

* ( m W ) Max ID 3.6A RDS(ON) Super high dense cell design for low RDS(ON). 45@ VGS = 4.5V 65@ VGS =2.5V Rugged and reliable. SOT-23 package. D SOT-23 D S G G S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuou

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STS2320 N-Channel Enhancement Mode Field Effect Transistor ETC

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