STS2302S Datasheet - SamHop Microelectronics

STS2302S N-Channel Enhancement Mode Field Effect Transistor

S T S 2302S S amHop Microelectronics C orp. S ep. 3 2005 N-C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 4A R DS (ON) S uper high dense cell design for low R DS (ON). R ugged and reliable. S OT-23 package. 47 @ V G S = 4.5V 60 @ V G S = 2.5V D S OT-23 D S G G S AB S OL UTE MAXIMUM R ATING (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C .

STS2302S Datasheet (727.34 KB)

STS2302S Datasheet Preview — Preview of STS2302S PDF

Datasheet Details

Part number:

STS2302S

Manufacturer:

SamHop Microelectronics

File Size:

727.34 KB

Description:

N-channel enhancement mode field effect transistor.

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STS2302S N-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics

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