STS2301A - P-Channel Enhancement Mode Field Effect Transistor
STS2301A Features
* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. S OT 23-3L D S G G D S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a