* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. S OT 23-3L D S G G D S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a
STS2301A
SamHop Microelectronics
97.48 KB
P-channel enhancement mode field effect transistor.
Green Product STS2301A Ver 1.1 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -20V ID -.
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