STS2300S - N-Channel Enhancement Mode Field Effect Transistor
S T S 2300S S amHop Microelectronics C orp.
S ep.
8 2005 N-C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 6A R DS (ON) S uper high dense cell design for low R DS (ON).
R ugged and reliable.
S OT-23 package.
35 @ V G S = 4.5V 45 @ V G S = 2.5V D S OT-23 D S G G S AB S OL UTE MAXIMUM R ATING (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C
